| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to uniformly form the heights of gate patterns by eliminating a self-align contact(SAC) insulating film and a hard mask film. CONSTITUTION: A tunnel insulating film, a first conductive film, a dielectric film, a second conductive film, and a hard mask film are stacked on a semiconductor substrate in order to form gate patterns. A SAC insulating film(107) and an interlayer insulating film are formed on the stacked films including the gate patterns. The SAC insulating film on the gate patterns is exposed. The exposed SAC insulating film is eliminated to expose the hard mask film. A buffer film(109) is formed on the stacked films including the hard mask film. A chemical mechanical polishing process is performed to expose the upper side of the second conductive film. A metal gate film is formed on the exposed second conductive film.</p> |
