| 摘要 |
<p>PURPOSE: A semiconductor device is provided to reduce interference electric charge between gates by filling air with low dielectric constant into a space between gates. CONSTITUTION: A gate insulating film(103) is formed on a semiconductor substrate. Gates are formed on the gate insulating film by stacking conductive films and tungsten films. A first sidewall oxide film, which is more protruded than the sidewall of the conductive film, is formed on the sidewall of the tungsten film. An auxiliary insulating film(119) shields gaps in the conductive films and fills gaps in the tungsten films.</p> |
