| 摘要 |
<p>PURPOSE: A method for fabricating a non-volatile memory device is provided to improve the operating property of a memory device by forming a control gate in a uniform line shape without roughness. CONSTITUTION: An element isolation film(108) is formed in an element isolation region. A dielectric film(110) is formed on a first conductive film and the element isolation film. A second conductive film and a third conductive film for a control gate are form on the dielectric film. A natural oxide film is formed between the second conductive film and the third conductive film. A gate mask pattern is formed on the third conductive film. The third conductive film is etched using the gate mask pattern until the natural oxide film is exposed. The exposed natural oxide film is eliminated. The gate mask pattern is eliminated.</p> |
