发明名称 METHOD TO INSPECT DEFECT OF RETICLE
摘要 <p>PURPOSE: A method for detecting defects in a reticle is provided to verify the capabilities of removing and detecting defects by forming a first defect pattern in a pre-defined region. CONSTITUTION: A normal pattern and a first defect pattern are formed in the pre-defined region of a reticle(S1). The first defect pattern is removed(S3). A deformity of the reticle is inspected(S5). A pattern for a semiconductor device is formed through an exposure process with the normal pattern of the reticle(S9). The deformity of the reticle is re-inspected by analyzing the pattern for the semiconductor device(S11).</p>
申请公布号 KR20100074626(A) 申请公布日期 2010.07.02
申请号 KR20080133114 申请日期 2008.12.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, DAE WOO
分类号 H01L21/66;H01L21/027 主分类号 H01L21/66
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