| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve carrier mobility by forming a silicon nitride film to be buried in the lower part of a transistor. CONSTITUTION: A thermal oxide film and a silicon nitride film(104) are successively formed on a semiconductor substrate. A first silicon epitaxial layer is formed on the semiconductor substrate including the silicon nitride film. A gate oxide film(142) and a gate electrode are formed on a channel region on the first silicon epitaxial layer. A lightly doped drain region(135) is formed on both sides of the gate electrode by implanting ions into the first silicon epitaxial layer. A spacer is formed on both sidewalls of the gate electrode.</p> |
