| 摘要 |
<p>PURPOSE: A method for fabricating a non-volatile memory device is provided to prevent the deterioration of a retention property due to the loss of electrical charges by eliminating conductive metallic residues on the sidewall of a gate. CONSTITUTION: A plurality of gate electrodes is formed on a semiconductor substrate(102). A first protective layer(116) is formed on the semiconductor substrate around the gate electrodes. An insulating layer is formed on the first protective layer around the gate electrodes. A second protective layer(120) is formed on the sidewall and the upper side of the gate electrodes which are not covered with the insulating layer. A contact hole is formed in the second protective layer. The insulating layer is eliminated. Conductive metallic residues on the sidewall of the gate electrodes are eliminated.</p> |
