| 摘要 |
<p>PURPOSE: A flash memory device and a method for manufacturing the same are provided to improve the uniformity of a gate line which is formed in a peripheral region by uniformly forming widths and densities of trenches in the peripheral region and a cell array region. CONSTITUTION: A semiconductor substrate(301) includes a first region and a second region. A memory cell and a select transistor are formed in the first region. A driving transistor for the memory cell and the select transistor is formed in the second region. A plurality of trenches(307) is formed on the semiconductor substrate into identical widths and densities. An element isolation film is formed in the trenches. A plurality of gate lines is formed on the semiconductor substrate and crosses the element isolation film.</p> |
