| 摘要 |
PURPOSE: A method for forming a contact plug of a semiconductor device is provided to improve the performance of the semiconductor device by preventing the contact plug from being bridged. CONSTITUTION: An insulation layer(106) including a contact hole is formed on a semiconductor substrate(102). The contact hole is filled with a metal layer by forming a metal barrier(108) and the metal layer on the insulation layer including the contact hole. A planarization process is performed on the upper side of the metal layer to form a contact plug(110a) in the contact hole. The planarization process is performed on the upper side of the insulation layer to lower the height of the insulation layer than that of the contact plug. The metal barrier remaining on the insulation layer is processed with plasma.
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