| 摘要 |
PURPOSE: A method for manufacturing a complementary metal-oxide-semiconductor(CMOS) image sensor is provided to improve optical efficiency by securing a photo diode region. CONSTITUTION: A gate insulating film(11) and a gate electrode are formed on a semiconductor substrate. A first oxide film, a nitride film(16), and a second oxide film are successively formed on the entire surface of the semiconductor substrate including the gate electrode. A second oxide film(18) is etched to expose the nitride film on a gate electrode through a wet etching process. A vapor-phase-cleaning etching process additionally etches the nitride film.
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