| 摘要 |
PURPOSE: A method for forming the junction region of a semiconductor device is provided to maintain the electrical property of a junction region by additionally performing an ion-implantation process with respect to a junction region with a wide gap. CONSTITUTION: First gate lines and second gate lines are formed on the upper side of a semiconductor substrate. First gate lines are separated by a first interval. Second gate lines are separated by a second interval which is wider than the first interval. A first ion-implantation process is performed with respect to a semiconductor substrate which is between the first and the second gate lines in order to form a first junction region(300a). A second ion-implantation process is performed to form a second junction region(300b) between the gate lines.
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