DRIVER CIRCUIT AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: A driver circuit and a semiconductor device is provided to implement an active ad passive device by using an oxide semiconductor. CONSTITUTION: A resistive device(354) applies a first oxide semiconductor layer(905) as parasitic resistance. A thin film transistor(355) applies a second oxide semiconductor layer having hydrogen concentration lower than the first oxide semiconductor layer as a channel. An oxide silicon layer(909) is formed on the second oxide semiconductor layer. A silicon nitride layer(910) is formed on the first oxide semiconductor layer and the oxide silicon layer.