ORGANIC THIN FILM TRANSISTOR, AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An organic thin film transistor and a manufacturing method thereof are provided to form an organic semiconductor channel with high crystallization and high charge mobility by forming an organic semiconductor layer, with a requested shape and size, on a channel region. CONSTITUTION: A gate electrode is formed on a substrate. A gate insulating layer(130) is formed on the gate electrode. A source electrode, a drain electrode, and a data electrode are formed on the gate insulation layer. A self-assembly monolayer(160) is formed on the upper side of the source electrode and the drain electrode. The channel region is removed to expose a part of the source electrode and the drain electrode. An organic semiconductor layer(170) is formed on the channel region.