MANUFACTURING METHOD OF GATE PATTERNS FOR FLASH MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing gate patterns for a flash memory device is provided to improve the interfacial property of a poly-silicon layer by improving the surface uniformity of the poly-silicon layer. CONSTITUTION: A tunnel insulating layer(103) is formed on a semiconductor substrate(101). An amorphous silicon layer is deposited on the upper side of the tunnel insulating layer. An annealing operation is performed under a vacuum condition in a chamber for depositing the amorphous silicon layer in order to form a grain and simultaneously eliminate exhaust gas inside the amorphous silicon layer.