| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to maintain the profile of the flash memory device and to reduce resistance by preventing cobalt from being intensely dispersed in the center part of the sidewall of a control gate. CONSTITUTION: A first insulating film, a second insulating film(111), and a third insulating film(112) are formed along gate lines and the surface of a semiconductor substrate(100). The insulating films have different etching rates. A planarization process is performed to expose a control gate. The second insulating film becomes lower than the first insulating film by an etching process. A metal film is formed on the surface of the semiconductor substrate including the control gate. The components of the metal film are dispersed into the control gate. The metal film is removed.</p> |
