发明名称 |
BURN-IN TEST CIRCUIT AND METHOD |
摘要 |
PURPOSE: A burn-in test circuit and a method thereof are provided to prevent degradation of a transistor although high burn-in voltage is applied to during a burn-in test. CONSTITUTION: A burn-in test mode input signal is activated. An electric potential difference control part(20) outputs a voltage. A voltage has a higher level than a ground voltage. A driving signal output part(10) outputs a burn-in voltage or the output voltage of the electric potential difference control part according to the driving signal. The electric potential difference control part outputs a core voltage. |
申请公布号 |
KR20100074717(A) |
申请公布日期 |
2010.07.02 |
申请号 |
KR20080133218 |
申请日期 |
2008.12.24 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HONG, SUNG PYO;KIM, JONG HWAN |
分类号 |
G11C29/06;G11C5/14;G11C7/10 |
主分类号 |
G11C29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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