发明名称 BURN-IN TEST CIRCUIT AND METHOD
摘要 PURPOSE: A burn-in test circuit and a method thereof are provided to prevent degradation of a transistor although high burn-in voltage is applied to during a burn-in test. CONSTITUTION: A burn-in test mode input signal is activated. An electric potential difference control part(20) outputs a voltage. A voltage has a higher level than a ground voltage. A driving signal output part(10) outputs a burn-in voltage or the output voltage of the electric potential difference control part according to the driving signal. The electric potential difference control part outputs a core voltage.
申请公布号 KR20100074717(A) 申请公布日期 2010.07.02
申请号 KR20080133218 申请日期 2008.12.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HONG, SUNG PYO;KIM, JONG HWAN
分类号 G11C29/06;G11C5/14;G11C7/10 主分类号 G11C29/06
代理机构 代理人
主权项
地址