| 摘要 |
<p>PURPOSE: A vertical channel type non-volatile memory device and a method for manufacturing the same are provided to improve the uniformity of a threshold voltage distribution by forming a channel with single-crystal silicon. CONSTITUTION: A plurality of sacrificing films and an interlayer insulating film(21) are alternatively formed on a substrate(20). A plurality of channel trenches, which is capable of exposing the substrate, is formed by etching a plurality of sacrificing films and the interlayer insulating film. A plurality of channels which is projected from the substrate is formed by filling a channel film in the channel trenches. The sacrificing films and the interlayer insulating film are etched to form a trench for removing the sacrificing films. The sidewall of a channel is exposed by removing the sacrificing films. A tunnel insulating film, a charge trapping film, a charge blocking film, and a conductive film for a gate electrode are successively formed on the exposed sidewall of the channel.</p> |
