| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve integration by forming a gate pattern in a recess even through the overall area of the semiconductor device decreases. CONSTITUTION: A gate insulation layer(112) is formed on a semiconductor substrate around the recess and the inner wall of a recess(302). The recess is formed by removing an oxide film pattern formed on the semiconductor substrate by an LOCOS(LOCal Oxidation of Silicon) process. The gate electrode is formed on the upper side of the gate insulation layer. A silicide layer(108) is formed on the upper sides of the gate electrode, the source region, and the drain region. The interlayer insulation layer is formed on the upper side of the semiconductor substrate with the silicide layer.</p> |
