| 摘要 |
PURPOSE: A method for forming a contact hole in a semiconductor device is provided to effectively remove an etching stop film which is exposed on the lower side of a contact hole by oxidizing the etching stop film and repeatedly performing an etching operation. CONSTITUTION: An etching stop film(122) and an insulating film are formed on a semiconductor substrate including a gate electrode(118). A first contact hole and a second contact hole are respectively formed on the semiconductor substrate and the gate electrode by etching the insulating film. The etching stop film is exposed at the lower side of the second contact hole. The exposed etching stop film is changed into an oxide film. The insulating film at the lower side of the first contact hole and the oxide film at the lower side of the second contact hole are etched. The etching stop film is exposed at the lower side of the first contact hole and etched.
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