| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the yield of manufacturing processes by reducing the residue of a nitride film during a nitride film removal process. CONSTITUTION: A pad oxide film(14) and a pad nitride film(16) are successively formed on a semiconductor substrate. The semiconductor substrate including the pad oxide film and the pad nitride film are selectively etched to form a trench. The trench is embedded by forming an oxide film. The entire surface of the semiconductor substrate is chemical and mechanically polished. The oxide film is etched. The pad nitride film is removed.
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