| 摘要 |
PURPOSE: A method for forming a contact plug in a semiconductor device is provided to reduce the inferiority of gap-filling by filling a contact hole with metal layers. CONSTITUTION: An insulating layer(104) is formed on a semiconductor substrate. An insulating film in a region for a contact plug is etched to form a contact hole. A first metal layer(106) is formed on the insulating film including the contact hole as a metal barrier. A protective layer is formed on the insulating film by modifying the first metal layer. Tungsten source gas is applied to the semiconductor substrate. The first metal layer reacts with the tungsten source gas, such that a second metal layer fills the inside of the contact hole. A planarization process is performed to the surface of the second metal layer.
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