| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the short-circuiting of a metal-insulator-metal(MIM) lower electrode by preventing the formation of a foot of a photo resist. CONSTITUTION: A first metal film, a lower electrode, and a second metal film(106) are successively formed on a semiconductor substrate. A capacitor dielectric layer is formed on a second metal film using silicon oxynitride. An upper electrode(110) is formed on a capacitor dielectric layer. Parts of the upper electrode and the capacitor dielectric layer are selectively etched using a photo resist pattern.
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