| 摘要 |
PURPOSE: A method for manufacturing a complementary metal-oxide-semiconductor(CMOS) image sensor is provided to prevent a cross-talk phenomenon between pixels by forming an air-gap between inter-layer insulating films. CONSTITUTION: A plurality of photo diodes(12) with fixed intervals is formed on a semiconductor substrate in which an active region and an element isolation region are defined using an element isolation film. A first interlayer insulating film is formed on the front surface of the semiconductor substrate including the photo diodes. A trench is formed on a part of the first interlayer insulating film. A gap-fill film is formed on the front surface of the first interlayer insulating film and an air-gap region(20) is formed inside the trench. A second interlayer insulating film is formed on a first protective film formed on the gap-fill film. A color filter layer(22) is formed on the second interlayer insulating film, and a micro lens is formed on the color filter layer.
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