| 摘要 |
<p>PURPOSE: A semiconductor device including a buried word-line is provided to improve a process margin by preventing the buried word-line from being etched during a contact-hole formation process. CONSTITUTION: A word-line trench is etched to a pre-set depth in order to form an active region. A buried word-line(114) is buried in a part of the active region. A capping nitride layer(118) is formed on the upper side of the buried word-line. A source/drain region is formed on both sides of the buried word-line. The height of the source/drain region is higher than that of the buried word-line. The height of the capping nitride layer is higher than that of the source/drain region.</p> |
