METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to simplify a semiconductor manufacturing process by simultaneously forming a well ion implantation region and a field stop ion implantation region. CONSTITUTION: A first conductive well is formed on a substrate. A second conductive dopant is implanted into the first conductive well using an ion-implantation mask as an implantation barrier in order to form a second conductive retrograde we. The second conductive dopant is vertically implanted into the substrate to simultaneously form a well ion implantation region(35A) and a field stop ion implantation region(35B).