发明名称 |
CAPACITOR AND METHOD FOR FABRICATING THE SAME |
摘要 |
PURPOSE: A capacitor and a manufacturing method thereof are provided to simplify a manufacturing process by forming a storage node contact plug with a selective growth method without a deposition process and an etch-back process. CONSTITUTION: A storage node contact plug(107) is formed with a selective growth method. A storage node is formed on a storage node contact plug. A dielectric layer is formed along the cross section of the storage node. A plate(114) is formed on the dielectric layer. A contact layer(108) covers the storage node contact plug.
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申请公布号 |
KR20100075240(A) |
申请公布日期 |
2010.07.02 |
申请号 |
KR20080133882 |
申请日期 |
2008.12.24 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
CHA, HAN SEOB |
分类号 |
H01L27/108;H01L21/28;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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