发明名称 CAPACITOR AND METHOD FOR FABRICATING THE SAME
摘要 PURPOSE: A capacitor and a manufacturing method thereof are provided to simplify a manufacturing process by forming a storage node contact plug with a selective growth method without a deposition process and an etch-back process. CONSTITUTION: A storage node contact plug(107) is formed with a selective growth method. A storage node is formed on a storage node contact plug. A dielectric layer is formed along the cross section of the storage node. A plate(114) is formed on the dielectric layer. A contact layer(108) covers the storage node contact plug.
申请公布号 KR20100075240(A) 申请公布日期 2010.07.02
申请号 KR20080133882 申请日期 2008.12.24
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 CHA, HAN SEOB
分类号 H01L27/108;H01L21/28;H01L21/8242 主分类号 H01L27/108
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