| 摘要 |
PURPOSE: A semiconductor device which is capable of removing a mobile ion from an interlayer insulating film is provided to remove mobile ions from a pre-metal-dielectric(PMD) layer by applying a negative voltage to a collector via which passes through the PMD layer in order to contact with a semiconductor substrate. CONSTITUTION: A gate electrode(220) is formed on a semiconductor substrate(210). A source region area and a drain region are formed on both sides of the gate electrode. A first PMD layer is formed on the semiconductor substrate in which the gate electrode, the source region, and the drain region are formed. A first collector via is contact with a part of the semiconductor substrate by passing through a first PMD layer. The first collector via is generated while a PMD layer is formed, and a voltage which is opposite to the polarity of mobile ions in the PMD layer is applied to the first collector.
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