发明名称 FUSE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
摘要 PURPOSE: A fuse of a semiconductor device and a forming method thereof are provided to reduce the energy of a laser in a blowing process by thinly forming a fuse blowing part. CONSTITUTION: A fuse of a semiconductor device includes a nitride layer, an insulation layer(23), and a fuse(33). The nitride layer is formed on a fuse region. The insulation layer is formed on the fuse blowing part of the nitride layer. The fuse is planarized on the insulation layer and the nitride layer. The fuse blowing part is thinner than the others. The fuse is made of copper.
申请公布号 KR20100074992(A) 申请公布日期 2010.07.02
申请号 KR20080133569 申请日期 2008.12.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, KI SOO;KIM, CHAN WOO
分类号 H01L21/82 主分类号 H01L21/82
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