| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to overcome a contact-defocus problem during a contact process by reducing the step difference on the rear side of a wafer. CONSTITUTION: An edge part(110) of a wafer is fixed using a furnace clamp. An insulating layer is formed on the wafer. A densification process is performed for the insulating layer. The center part of the rear side of the wafer excluding the edge part is screened by the clamp. The edge part is etched to reduce the curve of the insulating layer on the edge part. The clamp is removed. The insulating layer on the entire surface of the wafer is planarized.
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