| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to increase etching margin in forming the contact hole by forming an etch protection layer on the sidewall of a first contact hole. CONSTITUTION: A semiconductor substrate(102) includes a first insulation layer(120) between gate electrodes(125) with a first etch protection layer(118) and a gate spacer(116). A second insulation layer(130) and an etch stop layer(128) are formed on the gate electrode and the first insulation layer. A first contact hole to expose the etch protection layer is formed by etching the second insulation layer on the upper side of the gate electrode. A material layer for the etch protection layer is formed on the second insulation layer including the first contact hole. The material layer for the etch protection layer is removed from the lower side of the contact hole by performing an etching process on the material layer for the etch protection layer. A second contact hole to expose the part of the semiconductor substrate is formed by etching the first insulation layer and the etch stop layer.
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