| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device of which occurrence of a void in a drift region is suppressed. <P>SOLUTION: The semiconductor device includes a first conductive type semiconductor substrate 10 and a plurality of second conductive type semiconductor regions 21, 31-3n embedded respectively in a plurality of striped grooves formed in the semiconductor substrate 10 while being extended respectively in such row direction or column direction as parallel to a first main surface 101 of the semiconductor substrate 10 and being separated from each other at specific intervals. Depletion layers extending in the direction parallel to the first main surface 101 from a plurality of pn junctions formed respectively with the semiconductor substrate 10 and the semiconductor regions 21, 31-3n contact each other, so that the semiconductor substrate 10 and the semiconductor regions 21, 31-3n become depleted. <P>COPYRIGHT: (C)2010,JPO&INPIT |
