发明名称 Verfahren zur Ausruestung kantiger Elektrodenstaebe mit halbleitendem Material fuer den Bau von Richtleitern
摘要 732,605. Semiconductor rectifiers. STANDARD TELEPHONES & CABLES, Ltd. May 15, 1953 [June 27, 1952], No. 13660/53. Class 37. In a crystal diode, the element and electrode are mounted on plugs of polygonal cross-section which are held in an insulated tube by their sharp edges engaging rings attached to the tube. In Fig. 1, the brass rings 2, 2<1> are pushed into the open ends of ceramic tube 1 and rods 3, 3<1> of square cross-section are driven through the centres of rings 2. 2<1>. Rods 3, 3<1> carry the crystal 5 of germanium, silicon or other semiconductor and the whisker electrode 4. Sealing is effected by moulding compound or cement 9, 91. The spaces 6 between rods 3 and tubes 2 enables the crystal cavity to be filled with a suitable compound to render the electrode assembly shock-proof. A large wafer of germanium may be soldered in one operation to the end surfaces of a bunch of rods 3, and then cut so that the rods may be separated, each bearing its portion of germanium.
申请公布号 DE973211(C) 申请公布日期 1959.12.24
申请号 DE1952S029085 申请日期 1952.06.27
申请人 STANDARD ELEKTRIK LORENZ AKTIENGESELLSCHAFT, STUTTGART-ZUFFENHAUSEN 发明人 HERMANN HEINRICH;SEILER DR. PHIL. HABIL. KARL;NUERNBERG HANS WAGNER,
分类号 H01L21/00;H01L23/04 主分类号 H01L21/00
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