发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device includes: an active region defined by a device isolation layer on and/or over a substrate; a second conductive well on and/or over the active region; an extended drain formed at one side of the second conductive well; a gate electrode on and/or over the second conductive well and the extended drain; and a source and a drain formed at both sides of the gate electrode, in which extended regions are formed at the corners of the second conductive well under the gate electrode.
申请公布号 US2010163981(A1) 申请公布日期 2010.07.01
申请号 US20090648230 申请日期 2009.12.28
申请人 KIM JONG-MIN;YOO JAE-HYUN;PARK CHAN-HO 发明人 KIM JONG-MIN;YOO JAE-HYUN;PARK CHAN-HO
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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