METHOD FOR MANUFACTURING BONDED WAFER

摘要

A method for manufacturing a bonded wafer comprising forming an ion implanted layer by implanting at least one kind of gas ions from among hydrogen ions or rare gas ions into the surface of a bond wafer; bonding the ion implanted surface of the bond wafer and the surface of a base wafer directly together or through an oxide film, then separating the bond wafer at the ion implanted layer to thereby obtain a bonded wafer having a silicon thin film on the base wafer; and subjecting the bonded wafer to planarization heat treatment in an atmosphere containing hydrogen or hydrogen chloride.  In this method for manufacturing a bonded wafer, a dopant gas having the same conductivity type as that of the dopant contained in the silicon thin film is added into the atmosphere of the planarization heat treatment when the heat treatment is carried out.  Consequently, in this method for manufacturing a bonded wafer, planarization heat treatment can be carried out while suppressing changes in the dopant concentration in the silicon thin film of the bonded wafer that is obtained by ion implantation separation.