| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
<p>A semiconductor device is provided with a trench (102) formed in an interlayer insulation film (101) on a semiconductor substrate. The semiconductor device is further provided with a first barrier metal film (103) which is formed so as to cover the bottom and sidewalls of the trench (102) and which is produced from an electric conductor containing a platinum group element, high-melting-point metal, and nitrogen, and a metal film (105) which is formed on the first barrier metal film (103) in the trench (102).</p> |
| 申请公布号 |
WO2010073433(A1) |
申请公布日期 |
2010.07.01 |
| 申请号 |
WO2009JP04457 |
申请日期 |
2009.09.09 |
| 申请人 |
PANASONIC CORPORATION;TORAZAWA, NAOKI |
发明人 |
TORAZAWA, NAOKI |
| 分类号 |
H01L21/3205;C23C14/06;H01L21/285;H01L23/52 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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