| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to prevent a leakage current from being generated in a pixel array region by roundly forming the corner of an active region without an OPC(Optical Proximity Correction) in a pixel array region. CONSTITUTION: A mask where an OPC is applied to be corresponding to a logic circuit region is prepared(S100). A trench, which defines a moat region which has a round corner in the pixel array region and an angulated corner in the logic circuit region, is formed through a photo lithography process using the mask(S110). An element insulating layer is formed by burying an insulating layer inside the trench. A transistor is formed in the moat region(S120).
|
