METHOD FOR DECHUCKING A SUBSTRATE IN PLASMA PROCESSING APPARATUS

摘要

PURPOSE: A substrate de-chucking method in a plasma processing device is provided to improve de-chucking capability and prevent sticking by effectively removing a remaining charge on a substrate surface according to the control of a de-chucking voltage. CONSTITUTION: A plasma generation is interrupted after completing a plasma processing about a substrate which is maintained on an electro-static chuck with the chucking voltage of electro-static voltage. A first reverse voltage is applied to the electrostatic chuck. A middle turn-off step which stops the first reverse voltage apply in the electrostatic chuck is executed. After the middle turn-off step, a second reverse voltage which is smaller than the first reverse voltage is applied to the electrostatic chuck. The second reverse voltage apply is interrupted in the electrostatic chuck and the substrate is grounded.