| 摘要 |
PURPOSE: A Gallium nitride single crystal layer and a manufacturing device thereof are provided to reduce manufacturing costs and the productivity of a device by simultaneously growing a Gallium nitride single crystal layer and an epitaxial nitride gallium through a single process. CONSTITUTION: A first gas supply pipe(20) is combined with a chamber so that ammonia gas provided from the outside is sprayed to the inside of the chamber(10). A second gas supply pipe(30) is combined with the chamber so that Gallium chloride gas, which is generated by reacting Hydrochloride gas provided from the outside with Gallium arranged in the inside, is sprayed to the inside of the chamber. A first substrate support stand(40) settles a first substrate in order to be sloped towards the spray direction of the gases. A second substrate support stand(50) is installed inside the chamber in order to be arranged in the rearward of the first substrate support stand on the flowing path of the ammonia gas and the Gallium chloride gas.
|
