发明名称 COPPER WIRING FORMING METHOD, COPPER WIRING AND SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To decrease kinds of crystal surface as a surface of a layer, made principally of copper, of a surface layer part, and thereby to reduce the electric resistance of copper wiring by decreasing the density of a grain boundary present in a copper wiring body and to improve reliability by improving EM resistance and SM resistance. <P>SOLUTION: A copper wiring forming method of forming the copper wiring by providing an insulating layer 10 with the wiring body made of copper includes: a step of forming an opening 11 in the insulating layer 10; a copper alloy film-forming step of forming a copper alloy film 12 containing a metal element which is oxidized more easily than copper on an inner peripheral surface of the opening; a heat treatment step of carrying out a heat treatment on the copper alloy film to form a barrier layer of the copper alloy film and to decrease kinds of crystal surface forming the surface thereof; and a wiring body forming step of bonding copper onto the barrier layer to form the wiring body made of the copper. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010147311(A) 申请公布日期 2010.07.01
申请号 JP20080324061 申请日期 2008.12.19
申请人 TOHOKU UNIV;SENTAN HAISEN ZAIRYO KENKYUSHO:KK 发明人 KOIKE JUNICHI;SHIBATOMI AKIHIRO
分类号 H01L21/3205;H01L23/52 主分类号 H01L21/3205
代理机构 代理人
主权项
地址