| 发明名称 |
METHOD FOR SUPPRESSING SURFACE CORROSION IN SEMICONDUCTOR MANUFACTURING DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for effectively suppressing surface corrosion when apparatuses of a semiconductor manufacturing device are subjected to the action of a compound gas containing a fluorine atom and a chlorine atom. <P>SOLUTION: A compound gas containing a fluorine atom and a chlorine atom is introduced into a processing chamber of a semiconductor manufacturing device and an inside of piping communicating with the processing chamber to perform cleaning or processing. Then, a purge gas including an inert gas with a dew point temperature of 213 K or below is introduced into the processing chamber and the piping communicating with the processing chamber. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
| 申请公布号 |
JP2010147118(A) |
申请公布日期 |
2010.07.01 |
| 申请号 |
JP20080320399 |
申请日期 |
2008.12.17 |
| 申请人 |
IWATANI INTERNATL CORP |
发明人 |
KOIKE KUNIHIKO;NOGAMI CHITOSHI;YOSHINO YUTAKA |
| 分类号 |
H01L21/3065;C23C16/44;H01L21/205;H01L21/31 |
主分类号 |
H01L21/3065 |
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