SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate with a desired impurity profile by suppressing the diffusion of added impurities, and to provide a manufacturing method for the substrate. Ž

SOLUTION: There is provided the semiconductor substrate that includes a silicon carbon region 20 therein, with the carbon-to-silicon ratio of 2×10-5to 2×10-2;an insulation film 21 provided under the silicon carbon region 20; and a silicon region 22 provided under the insulation film 21. Ž

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