发明名称 SILICON OXIDE GEL FILM, TRANSPARENT CONDUCTIVE FILM AND SUBSTRATE IN WHICH TRANSPARENT CONDUCTIVE FILM IS LAID AND METHOD FOR PRODUCING THOSE
摘要 <P>PROBLEM TO BE SOLVED: To provide a transparent conductive film having high transmittance, high conductivity, surface flatness and excellent heat resistance and containing a network structure composed of metal fine particles, a substrate in which the transparent conductive film is laid, and to provide a method for producing the transparent conductive film. Ž<P>SOLUTION: The transparent conductive film is based on a silicon oxide gel film obtained by firing by heating and contains a network structure composed of metal fine particles, wherein the metal fine particles are made of a metal selected from Au, Ag, Cu, Pt, Pd, Fe, Co, Ni, Al, In and Sn or an alloy containing two or more of the metals. The substrate in which the transparent conductive film is laid is also provided. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010143802(A) 申请公布日期 2010.07.01
申请号 JP20080324354 申请日期 2008.12.19
申请人 TODA KOGYO CORP 发明人 KAKIHARA YASUO
分类号 C01B33/113;H01B5/14;H01B13/00 主分类号 C01B33/113
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