| 摘要 |
A method of manufacturing a flash memory device and devices thereof, which may be capable of preventing damage to a gate. A method of manufacturing a flash memory device may include preparing a semiconductor substrate having an active region defined by a device separator. A method of manufacturing a flash memory device may include forming a floating gate, a oxide-nitride-oxide (ONO) layer and/or a control gate layer on and/or over a substrate. A method of manufacturing a flash memory device may include forming a low temperature oxide (LTO) film on and/or over a control gate, etching a LTO film to expose a desired part of a control gate, using a LTO film as a mask to etch a desired part of each of a floating gate layer, a ONO layer and/or a control gate to form a gate pattern, and/or substantially removing a LTO film by wet etching.
|
