| 摘要 |
<p>PURPOSE: A manufacturing method of an oxide thin film transistor is provided to form an oxide thin film transistor at the low process by forming a semiconductor layer on a second substrate including an oxide semiconductor which requires a high temperature processing. CONSTITUTION: A gate electrode(120) is formed on a first substrate(110). A gate insulating layer(130) is formed on the gate electrode. A semiconductor layer(140) including an oxide semiconductor is formed on a second substrate(210). The semiconductor layer is separated from the second substrate and is attached to the gate insulating layer. An oxide thin film transistor is formed at the low temperature process because the semiconductor layer is separately formed and attached.</p> |
