| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of improving a recovery operation by reducing recovery loss which has limits in a trench contact structure. <P>SOLUTION: A lifetime killer 13 is formed in a p-type base region 3 or an n<SP>-</SP>-type drift layer 2 by irradiation of an electron beam or a helium beam. With this configuration, disappearance of carriers can be expedited by an action of the lifetime killer 13 at recovery operation. Thus, the depth of the contact trench 10 can be prevented from being deepened too much and recovery loss can be reduced, and recovery characteristics can be improved while preventing deterioration in withstand voltage between a collector and an emitter due to punch through of a base region 3 below the contact trench 10. <P>COPYRIGHT: (C)2010,JPO&INPIT |
