发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To reduce power consumption by dynamically making a circuit area other than an access object inactivated, based on an address signal. <P>SOLUTION: A semiconductor memory device includes: a plurality of memory banks 21-24, each having a plurality of circuit areas selected by address signals and being selected by a corresponding bank selection signal (one among source transistor control signals STC1-STC4); and a selective activation circuit 200 for activating either one circuit area from among a plurality of circuit areas included in the memory bank selected by the bank selection signal, and for inactivating at least one of the other circuit areas, based on each address signal PX0-PX7. Power consumption during an activated period can be reduced through dynamic control according to the address signal, rather than through batch control by an external command. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010146620(A) 申请公布日期 2010.07.01
申请号 JP20080320637 申请日期 2008.12.17
申请人 ELPIDA MEMORY INC 发明人 KITAYAMA MAKOTO
分类号 G11C11/401;G11C11/407 主分类号 G11C11/401
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