| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that can suppress a rise in temperature due to heat generation of a phosphor excited by excitation light from a high-power semiconductor light-emitting element to avoid a great decrease in conversion efficiency and deterioration. <P>SOLUTION: The semiconductor light-emitting device includes: the semiconductor light-emitting element 11; and a phosphor layer 12 containing the phosphor to be excited by excitation light emitted from the semiconductor light-emitting element 11. The phosphor layer 12 is formed to have a cross-section in a region of a cross-section of the light path of the excitation light. A heat-releasing member 13 exhibiting a higher heat conductance coefficient than that of the phosphor layer is disposed in contact with a portion of the phosphor layer 12. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
