| 摘要 |
PROBLEM TO BE SOLVED: To provide a display in which the particle size of crystal grains in a crystal silicon layer constituting an active layer can be varied in accordance with the function of a transistor. SOLUTION: The EL device 100 (display) is provided with a metal layer 21 and buffer films 22 and 23 which are formed on the surface of a substrate 1, a transistor 7 for selecting pixels which has an active layer 24 formed on the surface of the buffer film 23 in a region where the metal layer 21 is not formed, and a transistor 8 for driving current control which has an active layer 25 formed on the surface of the buffer film 23 in a region where the metal layer 21 is formed. The mean particle diameter of crystal grains in a crystal silicon layer 50 (a crystal silicon region 50b) constituting the active layer 25 of the transistor 8 for driving current control is smaller than the mean particle diameter of crystal grains in the crystal silicon layer 50 (a crystal silicon region 50a) constituting the active layer 24 of the transistor 7 for selecting pixels. COPYRIGHT: (C)2010,JPO&INPIT |
