| 摘要 |
A method for forming a fine pattern in a semiconductor device using a quadruple patterning includes forming a first partition layer over a first material layer which is formed over a substrate, performing a photo etch process on the first partition layer to form a first partition pattern, performing an oxidation process to form a first spacer sacrificial layer over a surface of the first partition pattern, forming a second spacer sacrificial layer over the substrate structure, forming a second partition layer filling gaps between the first partition pattern, removing the second spacer sacrificial layer, performing an oxidation process to form a third spacer sacrificial layer over a surface of the second partition layer and define a second partition pattern, forming a third partition pattern filling gaps between the first partition pattern and the second partition pattern, and removing the first and third spacer sacrificial layers.
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