PRODUCTION OF HIGH ALIGNMENT MARKS AND SUCH ALIGNMENT MARKS ON A SEMICONDUCTOR WAFER

摘要

The invention relates to production of alignment marks on a semiconductor wafer with the use of a light-opaque layer (17), wherein, before the light-opaque layer (17) is applied, by means of the etching of cavities, free-standing pillar groups are produced in the cavities and then the light-opaque layer (17) is applied. The pillars are produced with a height of above 1 µm, which, moreover, is greater than a thickness of the light-opaque layer (17) to be applied in the cavities as layer portions (17x; 17y). The cavities are formed with a width such that they are filled only partly with the layer portions (17x; 17y) when the light-opaque layer (17) is applied. The high, freely positioned alignment marks produced by the method as pillar series (16x; 16y), having a plurality of individual pillars (16a; 16a') in a cavity (12a, 12y), of a scribing trench on the semiconductor wafer are likewise described.