| 发明名称 |
MAGNETIC MEMORY ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY |
| 摘要 |
<p>A magnetic memory cell includes a magnetic recording layer and a magnetic tunnel junction unit. The magnetic recording layer is a ferromagnetic layer having a vertical magnetic anisotropy. The magnetic tunnel junction unit is used for reading out information from the magnetic recording layer. The magnetic recording layer has two magnetic wall moving domains.</p> |
| 申请公布号 |
WO2010074130(A1) |
申请公布日期 |
2010.07.01 |
| 申请号 |
WO2009JP71408 |
申请日期 |
2009.12.24 |
| 申请人 |
NEC CORPORATION;NAGAHARA KIYOKAZU;FUKAMI SHUNSUKE;ISHIWATA NOBUYUKI;SUZUKI TETSUHIRO;OHSHIMA NORIKAZU |
发明人 |
NAGAHARA KIYOKAZU;FUKAMI SHUNSUKE;ISHIWATA NOBUYUKI;SUZUKI TETSUHIRO;OHSHIMA NORIKAZU |
| 分类号 |
H01L21/8246;G11C11/15;H01L27/105;H01L29/82;H01L43/08 |
主分类号 |
H01L21/8246 |
| 代理机构 |
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